march 1994 avionics applications rf & microwave transistors .310 x .310 2lfl (s064) hermetically sealed . refractory/gold metallization . emitter site ballasted . :1 vswr capability . low thermal resistance . input matching . metal/ceramic hermetic package . p out = 15 w min. with 8.1 db gain . bandwidth 255 mhz description the AM80912-015 is designed for specialized avionics applications, including jtids, where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. the AM80912-015 is housed in the unique impac? hermetic metal/ceramic package with pin connection branding 80912-15 order code AM80912-015 absolute maximum ratings (t case = 25 c) symbol parameter value unit p diss power dissipation*(t c 100?c) 50 w i c device current* 1.8 a v cc collector-supply voltage* 32 v t j junction temperature (pulsed rf operation) 250 c t stg storage temperature - 65 to +200 c r th(j-c) junction-case thermal resistance* 3.0 c/w *applies only to rated rf amplifier operation AM80912-015 1. collector 3. emitter 2. base 4. base thermal data 1/6
electrical specifications (t case = 25 c) symbol test conditions value unit min. typ. max. p out f = 960 1215mhz p in = 2.3w v cc = 28v 15 17 w h cf = 960 1215mhz p in = 2.3w v cc = 28v 45 49 % g p f = 960 1215mhz p in = 2.3w v cc = 28v 8.1 8.9 db note: pulse format: 6.4 m s on 6.6 m s off, repeat for 3.3 ms, then off for 4.5125 ms. duty cycle: burst 49.2%, overall 20.8% static symbol test conditions value unit min. typ. max. bv cbo i c = 10ma i e = 0ma 55 v bv ebo i e = 1ma i c = 0ma 3.5 v bv cer ic = 10ma r be = 10 w 55 v i ces v be = 0v v ce = 28v 2.0 ma h fe v ce = 5v i c = 500ma 15 150 dynamic AM80912-015 2/6
typical performance typical broadband power amplifier relative power output & collector efficiency vs collector voltage maximum thermal resistance vs pulse width & duty cycle AM80912-015 3/6
typical input impedance typical collector load impedance p in = 2.3 w v cc = 28 v z o * = 50 ohms p in = 2.3 w v cc = 28 v z o * = 50 ohms *normalized impedance impedance data z in z cl freq. z in ( w )z cl ( w ) l = 960 mhz 5.7 + j 4.3 5.7 + j 7.7 m = 1090 mhz 5.8 + j 2.5 4.3 + j 6.5 h = 1215 mhz 5.0 + j 3.0 4.0 + j 4.8 AM80912-015 4/6
ref.: dwg. no. 104-000284 test circuit AM80912-015 5/6
ref.: dwg. no. 12-221 package mechanical data information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a AM80912-015 6/6
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